?2002 fairchild semiconductor corporation rev. c2, november 2002 nzt660/nzt660a absolute maximum ratings* t a =25 c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. notes: 1) these ratings are based on a maximum junction temperature of 150 c. 2) these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle operations. electrical characteristics t a =25 c unless otherwise noted * pulse test: pulse width 300 s, duty cycle 2.0% symbol parameter nzt660 nzt660a units v ceo collector-emitter voltage 60 60 v v cbo collector-base voltage 80 60 v v ebo emitter-base voltage 5 5 v i c collector current - continuous 3 3 a t j , t stg operating and storage junction temperature range - 55 ~ +150 - 55 ~ +150 c symbol parameter test conditions min. typ. max. units off characteristics bv ceo collector-emitter breakdown voltage i c = 10ma 60 v bv cbo collector-base breakdown voltage i c = 100 a nzt660 nzt660a 80 60 v v bv ebo emitter-base breakdown voltage i e = 100 a5v i cbo collector-base cutoff current v cb = 30v v cb = 30v, t a = 100 c 100 10 na a i ebo emitter-base cutoff current v eb = 4v 100 na on characteristics * h fe dc current gain i c = 100ma, v ce = 2v i c = 500ma, v ce = 2v nzt660 nzt660a i c = 1a, v ce = 2v i c = 3a, v ce = 2v 70 100 250 80 25 300 550 v ce (sat) collector-emitter saturation voltage i c = 1a, i b = 100ma i c = 3a, i b = 300ma nzt660 nzt660a 300 550 500 mv mv mv v be (sat) base-emitter saturation voltage i c = 1a, i b = 100ma 1.25 v v be (on) base-emitter on voltage i c = 1a, v ce = 2v 1 v small signal characteristics c obo output capacitance v cb = 10v, i e = 0, f = 1mhz 45 pf f t transition frequency i c = 100ma, v ce = 5v, f = 100mhz 75 mhz nzt660/nzt660a pnp low saturation transistor ? these devices are designed with high current gain and low saturation voltage with collector currents up to 3a continuous. sot-223 1 2 4 3 1. base 2. collector 3. emitter
?2002 fairchild semiconductor corporation nzt660/nzt660a rev. c2, november 2002 thermal characteristics t a =25 c unless otherwise noted symbol parameter max. units nzt660/nzt660a p d total device dissipation 2 w r ja thermal resistance, junction to ambient 62.5 c/w
?2002 fairchild semiconductor corporation nzt660/nzt660a rev. c2, november 2002 typical characteristics figure 1. base-emitter saturation voltage vs collector current figure 2. base-emitter on voltag vs collector current figure 3. collector-emitter saturation voltage vs collector current figure 4. input/output capacitance vs reverse bias voltage figure 5. current gain vs collector current = 10 base-emitter saturation voltage vs collector current 0.001 0.01 0.1 1 10 0.2 0.4 0.6 0.8 1 1.2 1.4 i - collector current (a) v -base-emitter saturation voltage(v) c b es a t 25c - 40c 125c = 1 0 = 10 = 10 collector current 0.0001 0.001 0.01 0.1 1 10 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 i - collector current (a) v - base-emitter on voltage (v) c beon 25 c - 40 c 125 c v = 2.0v ce voltage vs collector current 0.01 0.1 1 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 i - collector current (ma) v - collector-emitter voltage (v) c cesat - 40 c 25 c 125 c = = 1 0 = 10 = 10 0.1 0.5 1 10 20 50 100 0 50 100 150 200 250 300 350 400 v - collector voltage (v) capacitance (pf) ce v = 2.0v ce c ibo c obo f = 1.0mhz = 10 0.0001 0.001 0.01 0.1 1 10 0 100 200 300 400 500 600 700 800 900 1000 i - collector current (ma) h - current gain c fe 25 c 125 c - 40 c v = 2.0v ce = 10 = 10
3.00 0.10 7.00 0.30 0.65 0.20 0.08max 3.50 0.20 1.60 0.20 (0.46) (0.89) (0.60) (0.60) 1.75 0.20 0.70 0.10 4.60 0.25 6.50 0.20 (0.95) (0.95) 2.30 typ 0.25 max1.80 0 ~10 +0.10 ?.05 0.06 +0.04 ?.02 package dimensions nzt660/nzt660a sot-223 dimensions in millimeters ?2002 fairchild semiconductor corporation rev. c2, november 2002
?2002 fairchild semiconductor corporation rev. i1 trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. fact? fact quiet series? fast ? fastr? frfet? globaloptoisolator? gto? hisec? i 2 c? implieddisconnect? isoplanar? littlefet? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? pacman? pop? power247? powertrench ? qfet? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? silent switcher ? smart start? spm? stealth? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic? trutranslation? uhc? ultrafet ? vcx? acex? activearray? bottomless? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? across the board. around the world.? the power franchise? programmable active droop?
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